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Manufacturer: Bestirpower
Mfr. Part #: BCZ120N32W1
Part Number: C46472754
Package: TO-247-4
Description: TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Saturday, April 11, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
Bestirpower
Package
TO-247-4
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
2.9V
Pd - Power Dissipation
348W
Current - Continuous Drain(Id)
69A
Drain to Source Voltage
1200V
RDS(on)
32mΩ
Reverse Transfer Capacitance (Crss)
7pF
Ciss-Input Capacitance
2812pF
Gate Charge(Qg)
121nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
111pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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