Manufacturer: HTCSEMI
Mfr. Part #: HT120N650ADZ
Part Number: C47326411
Package: TO-247-3
Description: TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 30 in stock
Delivers By: Friday, November 14, 2025 *
30 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹1,541.30
10 - 29 Pieces
₹1,329.91
(13% off)
30 - 89 Pieces
₹1,200.82
(22% off)
90+ Pieces
₹1,092.90
(29% off)
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HTCSEMI
Package
TO-247-3
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
3.6V
Pd - Power Dissipation
416W
Current - Continuous Drain(Id)
120A
Drain to Source Voltage
650V
RDS(on)
21mΩ
Reverse Transfer Capacitance (Crss)
31pF
Ciss-Input Capacitance
5011pF
Gate Charge(Qg)
188nC
Operating Temperature
-40℃~+175℃
Output Capacitance(Coss)
289pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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