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Manufacturer: HTCSEMI
Mfr. Part #: HT165N1200AKZ
Part Number: C47326418
Package: TO-247-4L
Description: TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Saturday, April 11, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HTCSEMI
Package
TO-247-4L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
3.8V
Pd - Power Dissipation
517W
Current - Continuous Drain(Id)
165A
Drain to Source Voltage
1200V
RDS(on)
17mΩ
Reverse Transfer Capacitance (Crss)
21pF
Gate Charge(Qg)
293nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
202pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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