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Manufacturer: HTCSEMI
Mfr. Part #: HT19N1200ADZ
Part Number: C47326417
Package: TO-247-3
Description: TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Saturday, April 11, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HTCSEMI
Package
TO-247-3
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Pd - Power Dissipation
125W
Current - Continuous Drain(Id)
19A
Drain to Source Voltage
1200V
RDS(on)
196mΩ
Reverse Transfer Capacitance (Crss)
5pF
Ciss-Input Capacitance
606pF
Gate Charge(Qg)
40nC
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
55pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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