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Manufacturer: HTCSEMI
Mfr. Part #: HT36N900ADZ
Part Number: C47325507
Package: TO-247-3
Description: TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 30 in stock

Delivers By: Friday, November 14, 2025 *

30 in stock

×
Total:
1 - 9 pieces
924.79
10 - 29 pieces
798.05 (13% off)
30 - 89 pieces
720.69 (22% off)
90+ pieces
655.80 (29% off)

Bulk Pricing

1 - 9 Pieces
924.79
10 - 29 Pieces
798.05 (13% off)
30 - 89 Pieces
720.69 (22% off)
90+ Pieces
655.80 (29% off)

📦 Standard Packaging: 30/Piece

Products Specifications

Manufacturer HTCSEMI
Package TO-247-3
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 3.5V
Pd - Power Dissipation 125W
Current - Continuous Drain(Id) 36A
RDS(on) 78mΩ
Drain to Source Voltage 900V
Gate Charge(Qg) 33nC
Operating Temperature -55℃~+150℃

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece

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