[commercekit_product_gallery]
Manufacturer: HTCSEMI
Mfr. Part #: HT5N1700ADZ
Part Number: C47326412
Package: TO-247-3
Description: TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Saturday, April 11, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HTCSEMI
Package
TO-247-3
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Pd - Power Dissipation
69W
Current - Continuous Drain(Id)
5A
Drain to Source Voltage
1700V
RDS(on)
800mΩ
Ciss-Input Capacitance
215pF
Gate Charge(Qg)
22nC
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
19pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
Better price for more quantity?