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Manufacturer: HTCSEMI
Mfr. Part #: HT63N1200AKZ
Part Number: C47326413
Package: TO-247-4L
Description: TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 30 in stock

Delivers By: Wednesday, July 16, 2025 *

30 in stock

×
Total:
1 - 9 pieces
1,304.29
10 - 29 pieces
1,125.36 (13% off)
30 - 89 pieces
1,016.26 (22% off)
90+ pieces
924.79 (29% off)

Bulk Pricing

1 - 9 Pieces
1,304.29
10 - 29 Pieces
1,125.36 (13% off)
30 - 89 Pieces
1,016.26 (22% off)
90+ Pieces
924.79 (29% off)

📦 Standard Packaging: 30/Piece

Products Specifications

Manufacturer HTCSEMI
Package TO-247-4L
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 3.6V
Pd - Power Dissipation 341W
Current - Continuous Drain(Id) 63A
RDS(on) 43mΩ
Drain to Source Voltage 1200V
Reverse Transfer Capacitance (Crss) 8pF
Ciss-Input Capacitance 3357pF
Gate Charge(Qg) 118nC
Operating Temperature -40℃~+175℃
Output Capacitance(Coss) 129pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece

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