[commercekit_product_gallery]
Manufacturer: HXY MOSFET
Mfr. Part #: CMS120N080B-HXY
Part Number: C45896862
Package: TO-263-7L
Description: TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Saturday, April 11, 2026 *
Out of stock
📦 Standard Packaging: 50/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-263-7L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
3.6V
Pd - Power Dissipation
136W
Current - Continuous Drain(Id)
30A
Drain to Source Voltage
1200V
RDS(on)
85mΩ
Reverse Transfer Capacitance (Crss)
3.9pF
Ciss-Input Capacitance
920pF
Gate Charge(Qg)
40nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
57pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 50/Piece
Related Resources
- Datasheet
- EasyEDA Model
Better price for more quantity?