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Manufacturer: HXY MOSFET
Mfr. Part #: G3R75MT12J-HXY
Part Number: C45896860
Package: TO-263-7L
Description: TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 10 in stock

Delivers By: Wednesday, July 16, 2025 *

10 in stock

×
Total:
1 - 9 pieces
798.24
10 - 49 pieces
779.92 (2% off)
50 - 99 pieces
767.95 (3% off)
100+ pieces
755.73 (5% off)

Bulk Pricing

1 - 9 Pieces
798.24
10 - 49 Pieces
779.92 (2% off)
50 - 99 Pieces
767.95 (3% off)
100+ Pieces
755.73 (5% off)

📦 Standard Packaging: 50/Piece

Products Specifications

Manufacturer HXY MOSFET
Package TO-263-7L
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 3.6V
Pd - Power Dissipation 136W
Current - Continuous Drain(Id) 30A
RDS(on) 75mΩ
Drain to Source Voltage 1200V
Reverse Transfer Capacitance (Crss) 3.9pF
Ciss-Input Capacitance 920pF
Gate Charge(Qg) 40nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 57pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 50/Piece

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