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Manufacturer: HXY MOSFET
Mfr. Part #: HC1M15120S
Part Number: C41428811
Package: SOT-227
Description: SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 13 in stock
Delivers By: Saturday, April 11, 2026 *
13 in stock
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Total:
Bulk Pricing
1 - 23
Pieces
₹9,111.43
24+ Pieces
₹8,674.85
(4% off)
📦 Standard Packaging: 12/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
SOT-227
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Type
1 N-Channel
Pd - Power Dissipation
681W
Current - Continuous Drain(Id)
125A
RDS(on)
22mΩ@18V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
26pF
Ciss-Input Capacitance
4508pF
Gate Charge(Qg)
222nC
Operating Temperature
-40℃~+175℃
Output Capacitance(Coss)
214pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 12/Piece
Related Resources
- Datasheet
- EasyEDA Model
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