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Manufacturer: HXY MOSFET
Mfr. Part #: HC1M30065D
Part Number: C41428805
Package: TO-247
Description: TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 43 in stock

Delivers By: Saturday, November 15, 2025 *

43 in stock

×
Total:
1 - 9 pieces
1,925.56
10 - 29 pieces
1,661.36 (13% off)
30 - 89 pieces
1,500.27 (22% off)
90+ pieces
1,365.17 (29% off)

Bulk Pricing

1 - 9 Pieces
1,925.56
10 - 29 Pieces
1,661.36 (13% off)
30 - 89 Pieces
1,500.27 (22% off)
90+ Pieces
1,365.17 (29% off)

📦 Standard Packaging: 30/Piece

Products Specifications

Manufacturer HXY MOSFET
Package TO-247
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 4V
Type 1 N-Channel
Pd - Power Dissipation 428W
Current - Continuous Drain(Id) 90A
RDS(on) 40mΩ@18V
Drain to Source Voltage 650V
Reverse Transfer Capacitance (Crss) 22pF
Ciss-Input Capacitance 2079pF
Gate Charge(Qg) 98nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 180pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece

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