Manufacturer: HXY MOSFET
Mfr. Part #: HC1M320120D
Part Number: C41428808
Package: TO-247-4L
Description: TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 26 in stock
Delivers By: Tuesday, November 18, 2025 *
26 in stock
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Total:
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📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-247-4L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Type
1 N-Channel
Pd - Power Dissipation
60W
Current - Continuous Drain(Id)
7.6A
RDS(on)
450mΩ@18V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
4pF
Ciss-Input Capacitance
324pF
Gate Charge(Qg)
23.5nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
24pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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