Manufacturer: HXY MOSFET
Mfr. Part #: HC1M40120D
Part Number: C41428809
Package: TO-247
Description: TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 29 in stock
Delivers By: Saturday, November 15, 2025 *
29 in stock
×
Total:
Bulk Pricing
1 - 9
Pieces
₹2,389.24
10 - 29 Pieces
₹2,279.31
(4% off)
30 - 89 Pieces
₹2,089.27
(12% off)
90+ Pieces
₹1,923.43
(19% off)
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-247
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Type
1 N-Channel
Pd - Power Dissipation
357W
Current - Continuous Drain(Id)
68A
RDS(on)
40mΩ@18V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
14pF
Ciss-Input Capacitance
2766pF
Gate Charge(Qg)
112nC
Operating Temperature
-40℃~+175℃
Output Capacitance(Coss)
125pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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