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Manufacturer: HXY MOSFET
Mfr. Part #: HC1M40120J
Part Number: C41428801
Package: TO-263-7L
Description: TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 79 in stock

Delivers By: Saturday, November 15, 2025 *

79 in stock

×
Total:
1 - 9 pieces
1,853.61
10 - 49 pieces
1,772.13 (4% off)
50 - 99 pieces
1,631.22 (12% off)
100+ pieces
1,508.16 (18% off)

Bulk Pricing

1 - 9 Pieces
1,853.61
10 - 49 Pieces
1,772.13 (4% off)
50 - 99 Pieces
1,631.22 (12% off)
100+ Pieces
1,508.16 (18% off)

📦 Standard Packaging: 50/Piece

Products Specifications

Manufacturer HXY MOSFET
Package TO-263-7L
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 4V
Type 1 N-Channel
Pd - Power Dissipation 326W
Current - Continuous Drain(Id) 65A
RDS(on) 40mΩ@18V
Drain to Source Voltage 1200V
Reverse Transfer Capacitance (Crss) 14pF
Ciss-Input Capacitance 2766pF
Gate Charge(Qg) 112nC
Operating Temperature -40℃~+175℃
Output Capacitance(Coss) 125pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 50/Piece

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