Manufacturer: HXY MOSFET
Mfr. Part #: HC1M40120J
Part Number: C41428801
Package: TO-263-7L
Description: TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 79 in stock
Delivers By: Saturday, November 15, 2025 *
79 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹1,853.61
10 - 49 Pieces
₹1,772.13
(4% off)
50 - 99 Pieces
₹1,631.22
(12% off)
100+ Pieces
₹1,508.16
(18% off)
📦 Standard Packaging: 50/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-263-7L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Type
1 N-Channel
Pd - Power Dissipation
326W
Current - Continuous Drain(Id)
65A
RDS(on)
40mΩ@18V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
14pF
Ciss-Input Capacitance
2766pF
Gate Charge(Qg)
112nC
Operating Temperature
-40℃~+175℃
Output Capacitance(Coss)
125pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 50/Piece
Related Resources
- Datasheet
- EasyEDA Model
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