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Manufacturer: HXY MOSFET
Mfr. Part #: HC2M0045170P
Part Number: C41428802
Package: TO-247-4L
Description: TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Sunday, April 12, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-247-4L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Type
1 N-Channel
Pd - Power Dissipation
338W
Current - Continuous Drain(Id)
75A
Drain to Source Voltage
1700V
Reverse Transfer Capacitance (Crss)
6.7pF
Ciss-Input Capacitance
3455pF
Gate Charge(Qg)
204nC
Operating Temperature
-40℃~+150℃
Output Capacitance(Coss)
171pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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