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Manufacturer: HXY MOSFET
Mfr. Part #: HC2M0650170D
Part Number: C41428806
Package: TO-247
Description: TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Sunday, April 12, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-247
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Type
1 N-Channel
Pd - Power Dissipation
62W
Current - Continuous Drain(Id)
7A
Drain to Source Voltage
1700V
Reverse Transfer Capacitance (Crss)
2.1pF
Ciss-Input Capacitance
198pF
Gate Charge(Qg)
23nC
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
13pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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