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Manufacturer: HXY MOSFET
Mfr. Part #: HC3M0021120D
Part Number: C41428807
Package: TO-247
Description: TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Wednesday, July 16, 2025 *

Out of stock

Bulk Pricing

1 - 9 Pieces
3,020.91
10 - 29 Pieces
2,882.14 (4% off)
30 - 89 Pieces
2,641.55 (12% off)
90+ Pieces
2,431.95 (19% off)

📦 Standard Packaging: 30/Piece

Products Specifications

Manufacturer HXY MOSFET
Package TO-247
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type 1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id) 3.6V
Pd - Power Dissipation 469W
Current - Continuous Drain(Id) 81A
Drain to Source Voltage 1200V
Reverse Transfer Capacitance (Crss) 12pF
Ciss-Input Capacitance 4818pF
Gate Charge(Qg) 160nC
Operating Temperature -40℃~+175℃
Output Capacitance(Coss) 180pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece

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