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Manufacturer: HXY MOSFET
Mfr. Part #: HC3M0021120K
Part Number: C41428803
Package: TO-247-4L
Description: TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Saturday, April 11, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-247-4L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
3.6V
Pd - Power Dissipation
469W
Current - Continuous Drain(Id)
100A
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
12pF
Ciss-Input Capacitance
4818pF
Gate Charge(Qg)
162nC
Operating Temperature
-40℃~+175℃
Output Capacitance(Coss)
180pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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