Manufacturer: HXY MOSFET
Mfr. Part #: HC3M0120090D
Part Number: C41428804
Package: TO-247
Description: TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Saturday, November 15, 2025 *
Out of stock
Bulk Pricing
1 - 209
Pieces
₹1,166.02
210 - 509 Pieces
₹465.38
(60% off)
510 - 989 Pieces
₹449.89
(61% off)
990+ Pieces
₹442.03
(62% off)
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-247
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
3.5V
Type
1 N-Channel
Pd - Power Dissipation
97W
Current - Continuous Drain(Id)
23A
Drain to Source Voltage
900V
Reverse Transfer Capacitance (Crss)
3pF
Ciss-Input Capacitance
414pF
Gate Charge(Qg)
21nC
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
48pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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