Manufacturer: HXY MOSFET
Mfr. Part #: IMBG120R090M1HXTMA1-HXY
Part Number: C45896858
Package: TO-263-7L
Description: TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 10 in stock
Delivers By: Saturday, November 15, 2025 *
10 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹620.93
10 - 49 Pieces
₹606.61
(2% off)
50 - 99 Pieces
₹597.21
(3% off)
100+ Pieces
₹587.82
(5% off)
📦 Standard Packaging: 50/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-263-7L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
3.6V
Pd - Power Dissipation
136W
Current - Continuous Drain(Id)
30A
Drain to Source Voltage
1200V
RDS(on)
85mΩ
Reverse Transfer Capacitance (Crss)
3.9pF
Ciss-Input Capacitance
920pF
Gate Charge(Qg)
40nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
57pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 50/Piece
Related Resources
- Datasheet
- EasyEDA Model
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