Manufacturer: HXY MOSFET
Mfr. Part #: IMZA65R048M1H-HXY
Part Number: C45896859
Package: TO-247-4L
Description: TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 9 in stock
Delivers By: Saturday, November 15, 2025 *
9 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹561.75
10 - 29 Pieces
₹548.84
(2% off)
30 - 89 Pieces
₹540.37
(3% off)
90+ Pieces
₹531.69
(5% off)
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
HXY MOSFET
Package
TO-247-4L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4V
Current - Continuous Drain(Id)
53A
RDS(on)
250mΩ
Drain to Source Voltage
650V
Reverse Transfer Capacitance (Crss)
19pF
Ciss-Input Capacitance
1823pF
Gate Charge(Qg)
96nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
190pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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