Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R012M2HXTMA1
Part Number: C28441914
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 3 in stock
Delivers By: Sunday, November 16, 2025 *
3 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹3,256.05
10+ Pieces
₹3,142.23
(3% off)
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-263-7
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
5.1V
Pd - Power Dissipation
600W
Current - Continuous Drain(Id)
144A
RDS(on)
12.2mΩ
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
15pF
Ciss-Input Capacitance
4050pF
Gate Charge(Qg)
124nC
Output Capacitance(Coss)
176pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
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