Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R030M1HXTMA1
Part Number: C3289294
Package: TO-263-7-12
Description: TO-263-7-12 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 1 in stock
Delivers By: Sunday, November 16, 2025 *
1 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹1,979.67
10 - 29 Pieces
₹1,889.95
(4% off)
30 - 99 Pieces
₹1,734.43
(12% off)
100+ Pieces
₹1,599.00
(19% off)
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-263-7-12
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
5.7V
Type
1 N-Channel
Pd - Power Dissipation
300W
Current - Continuous Drain(Id)
56A
RDS(on)
30mΩ
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
11pF
Ciss-Input Capacitance
2290pF
Gate Charge(Qg)
63nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
105pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
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