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Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R053M2HXTMA1
Part Number: C28441915
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 20 in stock

Delivers By: Sunday, November 16, 2025 *

20 in stock

×
Total:
1 - 9 pieces
1,041.35
10 - 29 pieces
1,014.84 (2% off)
30 - 99 pieces
997.16 (4% off)
100+ pieces
979.47 (5% off)

Bulk Pricing

1 - 9 Pieces
1,041.35
10 - 29 Pieces
1,014.84 (2% off)
30 - 99 Pieces
997.16 (4% off)
100+ Pieces
979.47 (5% off)

📦 Standard Packaging: 1000/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-263-7
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 4.2V
Pd - Power Dissipation 205W
Current - Continuous Drain(Id) 41A
Drain to Source Voltage 1200V
RDS(on) 52.6mΩ
Reverse Transfer Capacitance (Crss) 3.2pF
Ciss-Input Capacitance 1010pF
Gate Charge(Qg) 30nC
Output Capacitance(Coss) 41pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece

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