Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R053M2HXTMA1
Part Number: C28441915
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 20 in stock
Delivers By: Sunday, November 16, 2025 *
20 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹1,041.35
10 - 29 Pieces
₹1,014.84
(2% off)
30 - 99 Pieces
₹997.16
(4% off)
100+ Pieces
₹979.47
(5% off)
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-263-7
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4.2V
Pd - Power Dissipation
205W
Current - Continuous Drain(Id)
41A
Drain to Source Voltage
1200V
RDS(on)
52.6mΩ
Reverse Transfer Capacitance (Crss)
3.2pF
Ciss-Input Capacitance
1010pF
Gate Charge(Qg)
30nC
Output Capacitance(Coss)
41pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
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