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Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R078M2HXTMA1
Part Number: C22417582
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Wednesday, April 15, 2026 *
Out of stock
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-263-7
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4.2V
Pd - Power Dissipation
158W
Current - Continuous Drain(Id)
29A
Drain to Source Voltage
1200V
RDS(on)
78.1mΩ
Reverse Transfer Capacitance (Crss)
2.4pF
Ciss-Input Capacitance
10700pF
Gate Charge(Qg)
20.6nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
28pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
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