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Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R116M2HXTMA1
Part Number: C28489444
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 10 in stock

Delivers By: Sunday, November 16, 2025 *

10 in stock

×
Total:
1 - 9 pieces
599.49
10 - 29 pieces
584.24 (2% off)
30 - 99 pieces
574.00 (4% off)
100+ pieces
563.74 (5% off)

Bulk Pricing

1 - 9 Pieces
599.49
10 - 29 Pieces
584.24 (2% off)
30 - 99 Pieces
574.00 (4% off)
100+ Pieces
563.74 (5% off)

📦 Standard Packaging: 1000/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-263-7
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 5.1V
Pd - Power Dissipation 123W
Current - Continuous Drain(Id) 21.2A
Drain to Source Voltage 1200V
RDS(on) 115.7mΩ
Reverse Transfer Capacitance (Crss) 1.6pF
Ciss-Input Capacitance 500pF
Gate Charge(Qg) 14.4nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 19pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece

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