Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R181M2HXTMA1
Part Number: C23040258
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 20 in stock
Delivers By: Sunday, November 16, 2025 *
20 in stock
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Total:
Bulk Pricing
1 - 9
Pieces
₹758.98
10 - 29 Pieces
₹643.20
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30 - 99 Pieces
₹574.32
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₹504.71
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500 - 999 Pieces
₹472.66
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₹458.06
(39% off)
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-263-7
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4.2V
Pd - Power Dissipation
94W
Current - Continuous Drain(Id)
14.9A
Drain to Source Voltage
1200V
RDS(on)
181.4mΩ
Ciss-Input Capacitance
350pF
Gate Charge(Qg)
9.7nC
Output Capacitance(Coss)
12pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
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