[commercekit_product_gallery]
Manufacturer: Infineon Technologies
Mfr. Part #: IMBG120R220M1HXTMA1
Part Number: C5342192
Package: TO-263-8
Description: TO-263-8 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Wednesday, April 15, 2026 *
Out of stock
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-263-8
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4.5V
Pd - Power Dissipation
83W
Current - Continuous Drain(Id)
13A
RDS(on)
220mΩ
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
1.5pF
Ciss-Input Capacitance
312pF
Gate Charge(Qg)
9.4nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
14pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
Better price for more quantity?