Manufacturer: Infineon Technologies
Mfr. Part #: IMBG65R007M2HXTMA1
Part Number: C23402827
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 6 in stock
Delivers By: Sunday, November 16, 2025 *
6 in stock
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Total:
Bulk Pricing
1 - 29
Pieces
₹4,069.68
30+ Pieces
₹3,851.78
(5% off)
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-263-7
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
5.6V
Pd - Power Dissipation
789W
Current - Continuous Drain(Id)
238A
RDS(on)
8.5mΩ
Drain to Source Voltage
650V
Reverse Transfer Capacitance (Crss)
35pF
Ciss-Input Capacitance
6359pF
Gate Charge(Qg)
179nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
613pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
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