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Manufacturer: Infineon Technologies
Mfr. Part #: IMBG65R007M2HXTMA1
Part Number: C23402827
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 6 in stock

Delivers By: Sunday, November 16, 2025 *

6 in stock

×
Total:
1 - 29 pieces
4,069.68
30+ pieces
3,851.78 (5% off)

Bulk Pricing

1 - 29 Pieces
4,069.68
30+ Pieces
3,851.78 (5% off)

📦 Standard Packaging: 1000/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-263-7
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 5.6V
Pd - Power Dissipation 789W
Current - Continuous Drain(Id) 238A
RDS(on) 8.5mΩ
Drain to Source Voltage 650V
Reverse Transfer Capacitance (Crss) 35pF
Ciss-Input Capacitance 6359pF
Gate Charge(Qg) 179nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 613pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece

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