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Manufacturer: Infineon Technologies
Mfr. Part #: IMBG65R015M2HXTMA1
Part Number: C22955220
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 10 in stock

Delivers By: Sunday, November 16, 2025 *

10 in stock

×
Total:
1 - 9 pieces
2,607.97
10 - 29 pieces
2,476.61 (5% off)
30 - 99 pieces
2,248.84 (13% off)
100+ pieces
2,050.01 (21% off)

Bulk Pricing

1 - 9 Pieces
2,607.97
10 - 29 Pieces
2,476.61 (5% off)
30 - 99 Pieces
2,248.84 (13% off)
100+ Pieces
2,050.01 (21% off)

📦 Standard Packaging: 1000/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-263-7
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 5.6V
Pd - Power Dissipation 416W
Current - Continuous Drain(Id) 115A
Drain to Source Voltage 650V
RDS(on) 18mΩ
Reverse Transfer Capacitance (Crss) 16pF
Ciss-Input Capacitance 2792pF
Gate Charge(Qg) 79nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 269pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece

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