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Manufacturer: Infineon Technologies
Mfr. Part #: IMBG65R020M2HXTMA1
Part Number: C22418014
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 1 in stock

Delivers By: Sunday, November 16, 2025 *

1 in stock

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Total:
1 - 9 pieces
1,497.85
10+ pieces
1,445.52 (3% off)

Bulk Pricing

1 - 9 Pieces
1,497.85
10+ Pieces
1,445.52 (3% off)

📦 Standard Packaging: 1000/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-263-7
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 5.6V
Pd - Power Dissipation 326W
Current - Continuous Drain(Id) 91A
RDS(on) 24mΩ
Drain to Source Voltage 650V
Reverse Transfer Capacitance (Crss) 11.5pF
Ciss-Input Capacitance 2038pF
Gate Charge(Qg) 57nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 197pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece

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