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Manufacturer: Infineon Technologies
Mfr. Part #: IMBG65R033M2H
Part Number: C42670690
Package: TO-263-7
Description: TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 5 in stock

Delivers By: Sunday, November 16, 2025 *

5 in stock

×
Total:
1 - 9 pieces
1,299.15
10 - 29 pieces
1,270.82 (2% off)
30 - 99 pieces
1,252.00 (3% off)
100+ pieces
1,233.20 (5% off)

Bulk Pricing

1 - 9 Pieces
1,299.15
10 - 29 Pieces
1,270.82 (2% off)
30 - 99 Pieces
1,252.00 (3% off)
100+ Pieces
1,233.20 (5% off)

📦 Standard Packaging: 1000/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-263-7
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 5.6V
Pd - Power Dissipation 227W
Current - Continuous Drain(Id) 58A
RDS(on) 41mΩ
Drain to Source Voltage 650V
Reverse Transfer Capacitance (Crss) 7pF
Ciss-Input Capacitance 1214pF
Gate Charge(Qg) 34nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 117pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece

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