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Manufacturer: Infineon Technologies
Mfr. Part #: IMW120R030M1H
Part Number: C536280
Package: TO-247-3
Description: TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 149 in stock

Delivers By: Sunday, November 16, 2025 *

149 in stock

×
Total:
1 - 9 pieces
2,188.70
10 - 29 pieces
2,010.38 (8% off)
30 - 89 pieces
1,846.36 (15% off)
90+ pieces
1,703.36 (22% off)

Bulk Pricing

1 - 9 Pieces
2,188.70
10 - 29 Pieces
2,010.38 (8% off)
30 - 89 Pieces
1,846.36 (15% off)
90+ Pieces
1,703.36 (22% off)

📦 Standard Packaging: 30/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-247-3
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 4.5V
Type 1 N-Channel
Pd - Power Dissipation 227W
Current - Continuous Drain(Id) 56A
RDS(on) 30mΩ@18V
Drain to Source Voltage 1200V
Reverse Transfer Capacitance (Crss) 13pF
Ciss-Input Capacitance 2120pF
Gate Charge(Qg) 63nC
Operating Temperature -55℃~+175℃

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece

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