Manufacturer: Infineon Technologies
Mfr. Part #: IMW120R090M1HXKSA1
Part Number: C2997935
Package: TO-247-3
Description: TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Sunday, November 16, 2025 *
Out of stock
Bulk Pricing
1 - 9
Pieces
₹1,250.79
10 - 29 Pieces
₹1,066.94
(14% off)
30 - 99 Pieces
₹954.93
(23% off)
100 - 499 Pieces
₹860.97
(31% off)
500+ Pieces
₹849.08
(32% off)
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-247-3
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
5.7V
Type
1 N-Channel
Pd - Power Dissipation
115W
Current - Continuous Drain(Id)
26A
RDS(on)
125mΩ
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
4pF
Ciss-Input Capacitance
707pF
Gate Charge(Qg)
21nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
39pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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