Manufacturer: Infineon Technologies
Mfr. Part #: IMYH200R050M1HXKSA1
Part Number: C20191546
Package: -
Description: Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Sunday, November 16, 2025 *
Out of stock
Bulk Pricing
1 - 29
Pieces
₹7,372.74
30+ Pieces
₹7,043.85
(4% off)
📦 Standard Packaging: 240/Piece
Products Specifications
Manufacturer
Infineon Technologies
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4.5V
Pd - Power Dissipation
348W
Current - Continuous Drain(Id)
48A
Drain to Source Voltage
2000V
RDS(on)
50mΩ
Reverse Transfer Capacitance (Crss)
5pF
Ciss-Input Capacitance
2425pF
Gate Charge(Qg)
82nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
81pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 240/Piece
Related Resources
- Datasheet
- EasyEDA Model
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