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Manufacturer: Infineon Technologies
Mfr. Part #: IMZ120R090M1H
Part Number: C536293
Package: TO-247-4
Description: TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 129 in stock

Delivers By: Sunday, November 16, 2025 *

129 in stock

×
Total:
1 - 9 pieces
1,401.61
10 - 29 pieces
1,203.02 (14% off)
30 - 89 pieces
1,081.96 (22% off)
90+ pieces
980.50 (30% off)

Bulk Pricing

1 - 9 Pieces
1,401.61
10 - 29 Pieces
1,203.02 (14% off)
30 - 89 Pieces
1,081.96 (22% off)
90+ Pieces
980.50 (30% off)

📦 Standard Packaging: 30/Piece

Products Specifications

Manufacturer Infineon Technologies
Package TO-247-4
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id) 5.7V
Type 1 N-Channel
Pd - Power Dissipation 115W
Current - Continuous Drain(Id) 26A
RDS(on) 90mΩ@18V
Drain to Source Voltage 1200V
Ciss-Input Capacitance 707pF
Gate Charge(Qg) 21nC
Operating Temperature -55℃~+175℃
Output Capacitance(Coss) 39pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece

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