Manufacturer: Infineon Technologies
Mfr. Part #: IMZ120R090M1H
Part Number: C536293
Package: TO-247-4
Description: TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 129 in stock
Delivers By: Sunday, November 16, 2025 *
129 in stock
×
Total:
Bulk Pricing
1 - 9
Pieces
₹1,401.61
10 - 29 Pieces
₹1,203.02
(14% off)
30 - 89 Pieces
₹1,081.96
(22% off)
90+ Pieces
₹980.50
(30% off)
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
Infineon Technologies
Package
TO-247-4
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
5.7V
Type
1 N-Channel
Pd - Power Dissipation
115W
Current - Continuous Drain(Id)
26A
RDS(on)
90mΩ@18V
Drain to Source Voltage
1200V
Ciss-Input Capacitance
707pF
Gate Charge(Qg)
21nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
39pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
Better price for more quantity?

