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Manufacturer: onsemi
Mfr. Part #: NTH4L028N170M1
Part Number: C5209022
Package: TO-247-4
Description: TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Thursday, April 16, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
onsemi
Package
TO-247-4
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
2.75V
Pd - Power Dissipation
535W
Current - Continuous Drain(Id)
81A
RDS(on)
28mΩ@20V
Drain to Source Voltage
1700V
Reverse Transfer Capacitance (Crss)
10pF
Ciss-Input Capacitance
4230pF
Gate Charge(Qg)
200nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
200pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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