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Manufacturer: Sichainsemi
Mfr. Part #: S1M014120H
Part Number: C22363603
Package: TO-247-4L
Description: TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Wednesday, April 15, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
Sichainsemi
Package
TO-247-4L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
2.8V
Pd - Power Dissipation
625W
Current - Continuous Drain(Id)
152A
RDS(on)
14mΩ@18V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
7.5pF
Ciss-Input Capacitance
5469pF
Gate Charge(Qg)
230nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
235pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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