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Manufacturer: Sichainsemi
Mfr. Part #: SG1M160120J
Part Number: C22363612
Package: TO-263-7L
Description: TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Wednesday, April 15, 2026 *
Out of stock
📦 Standard Packaging: 50/Piece
Products Specifications
Manufacturer
Sichainsemi
Package
TO-263-7L
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
2.8V
Pd - Power Dissipation
120W
Current - Continuous Drain(Id)
21A
RDS(on)
160mΩ@15V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
1.4pF
Ciss-Input Capacitance
617pF
Gate Charge(Qg)
25.4nC
Operating Temperature
-55℃~+175℃
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 50/Piece
Related Resources
- Datasheet
- EasyEDA Model
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