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Manufacturer: Sichainsemi
Mfr. Part #: SG1M160120J
Part Number: C22363612
Package: TO-263-7L
Description: TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 310 in stock

Delivers By: Saturday, November 15, 2025 *

310 in stock

×
Total:
1 - 9 pieces
428.64
10 - 49 pieces
362.72 (15% off)
50 - 99 pieces
321.40 (25% off)
100 - 499 pieces
279.28 (34% off)
500 - 999 pieces
260.14 (39% off)
1,000+ pieces
251.94 (41% off)

Bulk Pricing

1 - 9 Pieces
428.64
10 - 49 Pieces
362.72 (15% off)
50 - 99 Pieces
321.40 (25% off)
100 - 499 Pieces
279.28 (34% off)
500 - 999 Pieces
260.14 (39% off)
1,000+ Pieces
251.94 (41% off)

📦 Standard Packaging: 50/Piece

Products Specifications

Manufacturer Sichainsemi
Package TO-263-7L
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type 1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id) 2.8V
Pd - Power Dissipation 120W
Current - Continuous Drain(Id) 21A
RDS(on) 160mΩ@15V
Drain to Source Voltage 1200V
Reverse Transfer Capacitance (Crss) 1.4pF
Ciss-Input Capacitance 617pF
Gate Charge(Qg) 25.4nC
Operating Temperature -55℃~+175℃

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 50/Piece

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