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Manufacturer: STMicroelectronics
Mfr. Part #: SCT015W120G3-4AG
Part Number: C5456203
Package: HiP-247-4
Description: HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Wednesday, April 15, 2026 *
Out of stock
📦 Standard Packaging: 600/Piece
Products Specifications
Manufacturer
STMicroelectronics
Package
HiP-247-4
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4.2V
Pd - Power Dissipation
673W
Current - Continuous Drain(Id)
129A
Drain to Source Voltage
1200V
RDS(on)
20mΩ
Reverse Transfer Capacitance (Crss)
28pF
Ciss-Input Capacitance
3512pF
Gate Charge(Qg)
167nC
Operating Temperature
-55℃~+200℃
Output Capacitance(Coss)
183pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 600/Piece
Related Resources
- Datasheet
- EasyEDA Model
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