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Manufacturer: STMicroelectronics
Mfr. Part #: SCT025H120G3AG
Part Number: C37832211
Package: H2PAK-7
Description: H2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Thursday, April 16, 2026 *
Out of stock
📦 Standard Packaging: 1000/Piece
Products Specifications
Manufacturer
STMicroelectronics
Package
H2PAK-7
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
4.2V
Pd - Power Dissipation
375W
Current - Continuous Drain(Id)
55A
Drain to Source Voltage
1200V
RDS(on)
27mΩ
Reverse Transfer Capacitance (Crss)
12pF
Ciss-Input Capacitance
1990pF
Gate Charge(Qg)
73nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
102pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 1000/Piece
Related Resources
- Datasheet
- EasyEDA Model
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