Manufacturer: STMicroelectronics
Mfr. Part #: SCT070W120G3-4AG
Part Number: C5693016
Package: HiP247-4
Description: HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
📦 48 in stock
Delivers By: Saturday, November 15, 2025 *
48 in stock
×
Total:
Bulk Pricing
1 - 9
Pieces
₹1,641.11
10 - 29 Pieces
₹1,422.90
(13% off)
30 - 89 Pieces
₹1,289.63
(21% off)
90+ Pieces
₹1,178.14
(28% off)
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
STMicroelectronics
Package
HiP247-4
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
4.2V
Pd - Power Dissipation
236W
Current - Continuous Drain(Id)
30A
RDS(on)
63mΩ@18V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
5pF
Ciss-Input Capacitance
900pF
Gate Charge(Qg)
41nC
Operating Temperature
-55℃~+200℃
Output Capacitance(Coss)
40pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
Better price for more quantity?