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Manufacturer: STMicroelectronics
Mfr. Part #: SCT070W120G3-4AG
Part Number: C5693016
Package: HiP247-4
Description: HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Wednesday, April 15, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
STMicroelectronics
Package
HiP247-4
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
4.2V
Pd - Power Dissipation
236W
Current - Continuous Drain(Id)
30A
RDS(on)
63mΩ@18V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
5pF
Ciss-Input Capacitance
900pF
Gate Charge(Qg)
41nC
Operating Temperature
-55℃~+200℃
Output Capacitance(Coss)
40pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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