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Manufacturer: SUPSiC
Mfr. Part #: GC2M0280120D
Part Number: C7435049
Package: TO247-3
Description: TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Monday, April 13, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
SUPSiC
Package
TO247-3
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type
1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)
3.1V
Pd - Power Dissipation
69.4W
Current - Continuous Drain(Id)
11A
RDS(on)
320mΩ@20V
Drain to Source Voltage
1200V
Reverse Transfer Capacitance (Crss)
4pF
Ciss-Input Capacitance
267pF
Gate Charge(Qg)
19nC
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
31pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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