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Manufacturer: SUPSiC
Mfr. Part #: GC2M0280120D
Part Number: C7435049
Package: TO247-3
Description: TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

📦 52 in stock

Delivers By: Friday, November 14, 2025 *

52 in stock

×
Total:
1 - 9 pieces
597.69
10 - 29 pieces
570.68 (4% off)
30 - 89 pieces
553.99 (7% off)
90+ pieces
540.14 (9% off)

Bulk Pricing

1 - 9 Pieces
597.69
10 - 29 Pieces
570.68 (4% off)
30 - 89 Pieces
553.99 (7% off)
90+ Pieces
540.14 (9% off)

📦 Standard Packaging: 30/Piece

Products Specifications

Manufacturer SUPSiC
Package TO247-3
Category Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Type 1 N-Channel
Gate Threshold Voltage (Vgs(th)@Id) 3.1V
Pd - Power Dissipation 69.4W
Current - Continuous Drain(Id) 11A
RDS(on) 320mΩ@20V
Drain to Source Voltage 1200V
Reverse Transfer Capacitance (Crss) 4pF
Ciss-Input Capacitance 267pF
Gate Charge(Qg) 19nC
Operating Temperature -55℃~+150℃
Output Capacitance(Coss) 31pF

Additional Information

Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece

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