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Manufacturer: Tokmas
Mfr. Part #: IXTH1N200P3(TOKMAS)
Part Number: C48586471
Package: TO-247-3
Description: TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Delivers By: Sunday, April 12, 2026 *
Out of stock
📦 Standard Packaging: 30/Piece
Products Specifications
Manufacturer
Tokmas
Package
TO-247-3
Category
Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Gate Threshold Voltage (Vgs(th)@Id)
2.8V
Pd - Power Dissipation
94W
Current - Continuous Drain(Id)
8.7A
Drain to Source Voltage
2200V
RDS(on)
1.4Ω
Reverse Transfer Capacitance (Crss)
2.7pF
Ciss-Input Capacitance
168pF
Gate Charge(Qg)
15nC
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
13pF
Additional Information
Minimum Qty: 1
Multiple : 1
Standard Packaging: 30/Piece
Related Resources
- Datasheet
- EasyEDA Model
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